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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology TEAMGROUP-UD4-2400 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
  • 更快的写入速度，GB/s
    11.8 left arrow 11.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Micron Technology TEAMGROUP-UD4-2400 16GB 需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 16.7
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    16.7 left arrow 16.8
  • 写入速度，GB/s
    11.8 left arrow 11.3
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3119

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR24D4S7D8MB-16 16GB
Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 9905678-033.A00G 4GB
Kingston 9905678-033.A00G 4GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C16-8GTZNC 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-2133C15-4GVR 4GB
G Skill Intl F4-2133C15-4GVR 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9905704-007.A00G 4GB
Kingston 9905704-007.A00G 4GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
Samsung M378B5273TB0-CK0 4GB
Samsung M378B5273TB0-CK0 4GB
内存RAM
Nanya Technology M2F4G64CB8HG4N-CG 4GB
Nanya Technology M2F4G64CB8HG4N-CG 4GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
Ramaxel Technology RMUA5200MJ78HAF-3200 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
内存RAM