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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A1G43EB1-CPB 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 34
    左右 21% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
Samsung M378A1G43EB1-CPB 8GB 需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB
报告一个错误

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 34
  • 读取速度，GB/s
    16.7 left arrow 15.4
  • 写入速度，GB/s
    11.8 left arrow 11.5
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 2763

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Samsung M378A1G43EB1-CPB 8GB RAM的比较

Samsung M378A1K43BB1-CPB 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-32GVK 32GB
G Skill Intl F4-3200C16-32GVK 32GB
内存RAM
Samsung M378B1G73QH0-CK0 8GB
Samsung M378B1G73QH0-CK0 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 99U5711-001.A00G 4GB
Kingston 99U5711-001.A00G 4GB
内存RAM
Kingston KN2M64-ETB 8GB
Kingston KN2M64-ETB 8GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
内存RAM
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT51264BF160B.M16F 4GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM