Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Avexir Technologies Corporation T 4GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Avexir Technologies Corporation T 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分

Avexir Technologies Corporation T 4GB

Avexir Technologies Corporation T 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

报告一个错误

Avexir Technologies Corporation T 4GB

需要考虑的原因
Avexir Technologies Corporation T 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 34

左右 -62% 更低的延时
更快的读取速度，GB/s

18 8.6

测试中的平均数值
更快的写入速度，GB/s

13.4 5.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Avexir Technologies Corporation T 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 21
读取速度，GB/s

8.6 18.0
写入速度，GB/s

5.8 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1682 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F4-3200C14-32GTZR 32GB

Corsair CM3X2G1600C9 2GB

Corsair CM3X2G1600C9 2GB

Crucial Technology BLS8G4D240FSE.16FBR2 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB