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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Corsair CMD8GX4M2B3466C18 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Corsair CMD8GX4M2B3466C18 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Corsair CMD8GX4M2B3466C18 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
需要考虑的原因
Corsair CMD8GX4M2B3466C18 4GB
报告一个错误
低于PassMark测试中的延时,ns
20
34
左右 -70% 更低的延时
更快的读取速度,GB/s
19
8.6
测试中的平均数值
更快的写入速度,GB/s
15.3
5.8
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Corsair CMD8GX4M2B3466C18 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
20
读取速度,GB/s
8.6
19.0
写入速度,GB/s
5.8
15.3
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1682
2939
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Corsair CMD8GX4M2B3466C18 4GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMD32GX4M4E4000C19 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
AMD R9S48G3206U2S 8GB
Samsung 1600 CL10 Series 8GB
Avant Technology J641GU49J2320NE 8GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A4G43AB2-CWE 32GB
G Skill Intl F3-14900CL9-4GBSR 4GB
SK Hynix GKE160UD102408-2400 16GB
Samsung M471B5273DH0-CK0 4GB
Corsair CMW32GX4M2C3466C16 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9905713-019.A00G 4GB
报告一个错误
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Bug description
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