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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Crucial Technology BL8G32C16U4BL.M8FE 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Crucial Technology BL8G32C16U4BL.M8FE 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
需要考虑的原因
Crucial Technology BL8G32C16U4BL.M8FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
34
左右 -21% 更低的延时
更快的读取速度,GB/s
19.2
8.6
测试中的平均数值
更快的写入速度,GB/s
15.0
5.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
28
读取速度,GB/s
8.6
19.2
写入速度,GB/s
5.8
15.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1682
3532
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
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Corsair CM3B4G2C1600L9 4GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
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SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Kingston 9905403-090.A01LF 4GB
Neo Forza NMUD480E82-3600 8GB
Kingston 99U5403-034.A00G 4GB
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
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