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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Kllisre 8ATF1G64AZ-2G6H1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Kllisre 8ATF1G64AZ-2G6H1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
49
左右 31% 更低的延时
需要考虑的原因
Kllisre 8ATF1G64AZ-2G6H1 8GB
报告一个错误
更快的读取速度,GB/s
10.8
8.6
测试中的平均数值
更快的写入速度,GB/s
8.3
5.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
49
读取速度,GB/s
8.6
10.8
写入速度,GB/s
5.8
8.3
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1682
2302
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Micron Technology 18HTF12872AY-800F1 1GB
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G Skill Intl F4-2133C15-16GVR 16GB
报告一个错误
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Bug description
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