Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Smart Modular SF4641G8CK8I8HLSBG 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

总分
star star star star star
Smart Modular SF4641G8CK8I8HLSBG 8GB

Smart Modular SF4641G8CK8I8HLSBG 8GB

差异

  • 更快的读取速度,GB/s
    16.2 left arrow 8.6
    测试中的平均数值
  • 更快的写入速度,GB/s
    12.0 left arrow 5.8
    测试中的平均数值
  • 更高的内存带宽,mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    34 left arrow 34
  • 读取速度,GB/s
    8.6 left arrow 16.2
  • 写入速度,GB/s
    5.8 left arrow 12.0
  • 内存带宽,mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1682 left arrow 2908
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较