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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
67
左右 49% 更低的延时
需要考虑的原因
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
报告一个错误
更快的读取速度,GB/s
16.7
8.6
测试中的平均数值
更快的写入速度,GB/s
9.0
5.8
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
67
读取速度,GB/s
8.6
16.7
写入速度,GB/s
5.8
9.0
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1682
1879
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology BLE4G3D1608DE1TX0. 4GB
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SpecTek Incorporated ?????????????????? 2GB
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Samsung M393B1K70CH0-YH9 8GB
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Kingston HP24D4U7S8MBP-4 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMW32GX4M4D3600C16 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Gold Key Technology Co Ltd NMUD480E85-3200E 8GB
Kingston 9905403-447.A00LF 4GB
Corsair CMH16GX4M2D3600C18 8GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMK16GX4M2B3000C15 8GB
报告一个错误
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