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Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston ACR16D3LS1KBG/4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB vs Kingston ACR16D3LS1KBG/4G 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

总分
star star star star star
Kingston ACR16D3LS1KBG/4G 4GB

Kingston ACR16D3LS1KBG/4G 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 80
    左右 61% 更低的延时
  • 更快的读取速度，GB/s
    11.3 left arrow 5.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.0 left arrow 4.1
    测试中的平均数值
Kingston ACR16D3LS1KBG/4G 4GB 需要考虑的原因
Kingston ACR16D3LS1KBG/4G 4GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Kingston ACR16D3LS1KBG/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    31 left arrow 80
  • 读取速度，GB/s
    11.3 left arrow 5.2
  • 写入速度，GB/s
    8.0 left arrow 4.1
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2066 left arrow 998

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB RAM的比较

Ramaxel Technology RMT3170EB68F9W1600 4GB
SK Hynix HMT41GS6MFR8C-PB 8GB

Kingston ACR16D3LS1KBG/4G 4GB RAM的比较

Kingston ACR16D3LS1KFG/4G 4GB
G Skill Intl F4-3400C16-8GSXW 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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