RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMT128GX4M4C3200C16 32GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Corsair CMT128GX4M4C3200C16 32GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Corsair CMT128GX4M4C3200C16 32GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
53
左右 47% 更低的延时
需要考虑的原因
Corsair CMT128GX4M4C3200C16 32GB
报告一个错误
更快的读取速度,GB/s
13.5
12.4
测试中的平均数值
更快的写入速度,GB/s
13.1
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Corsair CMT128GX4M4C3200C16 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
53
读取速度,GB/s
12.4
13.5
写入速度,GB/s
9.6
13.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
2871
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Corsair CMT128GX4M4C3200C16 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905458-017.A01LF 4GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5316-017.A00LF 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 18ASF1G72AZ-2G1A1 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Samsung M391B5673FH0-CH9 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Kingston K1N7HK-ELC 2GB
SK Hynix HMA82GR7MFR8N-UH 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
Samsung M393B2G70BH0-CK0 16GB
Samsung M471A1A43DB0-CPB 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK32GX4M2D3600C18 16GB
Kingston KHX318C10FR/8G 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Kingston 9905471-006.A01LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4600C18-8GTRS 8GB
报告一个错误
×
Bug description
Source link