RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Crucial Technology CT16G4SFRA32A.M16FRS 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
51
左右 45% 更低的延时
需要考虑的原因
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
报告一个错误
更快的读取速度,GB/s
16.1
12.4
测试中的平均数值
更快的写入速度,GB/s
13.5
9.6
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
51
读取速度,GB/s
12.4
16.1
写入速度,GB/s
9.6
13.5
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2329
2778
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Corsair CMK16GX4M2C3600C20 8GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMD16GX4M2A2400C14 8GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMR32GX4M2C3000C15 16GB
Kingston 99U5471-012.A00LF 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMT16GX4M2C3000C15 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4133C19-8GTZSWF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA451U7MFR8N-TF 4GB
AMD AE34G2139U2 4GB
Crucial Technology BL16G36C16U4RL.M16FE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
报告一个错误
×
Bug description
Source link