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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs G Skill Intl F4-3000C14-16GTZ 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
G Skill Intl F4-3000C14-16GTZ 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
31
左右 10% 更低的延时
需要考虑的原因
G Skill Intl F4-3000C14-16GTZ 16GB
报告一个错误
更快的读取速度,GB/s
17.5
12.4
测试中的平均数值
更快的写入速度,GB/s
13.6
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
31
读取速度,GB/s
12.4
17.5
写入速度,GB/s
9.6
13.6
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2329
3371
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
G Skill Intl F4-3000C14-16GTZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5173QH0-YK0 4GB
Mushkin 99[2/7/4]204[F/T] 4GB
Kingston 9905403-444.A00LF 4GB
Kingston HP26D4U9S8ME-8 8GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston KHYXPX-MID 8GB
Apacer Technology 78.C1GET.9K10C 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M2D3000C16 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMR16GX4M2C3600C18 8GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD416G266681 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9965669-025.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Essencore Limited KD48GU880-32A160X 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-8GRK 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
SK Hynix HMA82GU6CJR8N-VK 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMK32GX4M2Z4000C18 16GB
报告一个错误
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Bug description
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