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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Kingston 8ATF1G64AZ-2G3A1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Kingston 8ATF1G64AZ-2G3A1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
69
左右 59% 更低的延时
更快的写入速度,GB/s
9.6
6.1
测试中的平均数值
需要考虑的原因
Kingston 8ATF1G64AZ-2G3A1 8GB
报告一个错误
更快的读取速度,GB/s
14
12.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston 8ATF1G64AZ-2G3A1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
69
读取速度,GB/s
12.4
14.0
写入速度,GB/s
9.6
6.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
1542
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Kingston 8ATF1G64AZ-2G3A1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5584-004.A00LF 4GB
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Kingston 9905584-016.A00LF 4GB
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Kingston 99U5403-036.A00G 4GB
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Kingston 9965662-018.A00G 32GB
Corsair CML8GX3M2A1866C9 4GB
Kingston 9905678-139.A00G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung M393B1K70CH0-CH9 8GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
报告一个错误
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