RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M393A2K43BB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Samsung M393A2K43BB1-CRC 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

总分
star star star star star
Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 53
    左右 47% 更低的延时
  • 更快的读取速度，GB/s
    12.4 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.6 left arrow 7.8
    测试中的平均数值
Samsung M393A2K43BB1-CRC 16GB 需要考虑的原因
Samsung M393A2K43BB1-CRC 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Samsung M393A2K43BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 53
  • 读取速度，GB/s
    12.4 left arrow 10.4
  • 写入速度，GB/s
    9.6 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2329 left arrow 2333

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较

Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB

Samsung M393A2K43BB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Kingston 9905734-082.A00G 16GB
Kingston 9905734-082.A00G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX2666C16D4/32GX 32GB
Kingston KHX2666C16D4/32GX 32GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
ISD Technology Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-16GVK 16GB
G Skill Intl F4-3200C14-16GVK 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HMA84GR7MFR4N-TF 32GB
SK Hynix HMA84GR7MFR4N-TF 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology W641GU67J5213N8 8GB
Avant Technology W641GU67J5213N8 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Apacer Technology D12.2344DT.001 4GB
Apacer Technology D12.2344DT.001 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMT32GX4M4C3466C16 8GB
Corsair CMT32GX4M4C3466C16 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kllisre M471A3243BB0-CP50 16GB
Kllisre M471A3243BB0-CP50 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair MK16GX4M2B3200C16 8GB
Corsair MK16GX4M2B3200C16 8GB
内存RAM