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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
56
左右 50% 更低的延时
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
更快的读取速度,GB/s
20.1
12.4
测试中的平均数值
更快的写入速度,GB/s
10.5
9.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
56
读取速度,GB/s
12.4
20.1
写入速度,GB/s
9.6
10.5
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2329
2455
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-14900CL8-4GBXM 4GB
Transcend Information JM2666HSB-16G 16GB
Samsung M393B1K70CH0-CH9 8GB
V-GEN D4H4GS24A8 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Asgard VMA42UH-MEC1U2AJ2 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Gloway International (HK) STK2400C15-16GB 16GB
Essencore Limited KD4AGS88A-26N1600 16GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Kingston 99U5429-007.A00LF 2GB
Crucial Technology BL16G30C15U4B.16FE 16GB
AMD R538G1601U2S 8GB
Crucial Technology BL16G32C16U4R.M16FE1 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD8266 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
SK Hynix HYMP512S64CP8-Y5 1GB
G Skill Intl F4-4000C19-16GTZR 16GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C22-16GRS 16GB
报告一个错误
×
Bug description
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