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Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Samsung M378B5673EH1-CF8 2GB vs Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 28
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 23
  • 读取速度，GB/s
    12.7 left arrow 16.7
  • 写入速度，GB/s
    7.5 left arrow 13.2
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 3025

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Apacer Technology 78.CAGNT.AR40B 8GB
Apacer Technology 78.CAGNT.AR40B 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2F4400C19 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9965662-008.A01G 16GB
Kingston 9965662-008.A01G 16GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
Crucial Technology BLS16G4D240FSE.16FBR 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM