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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
需要考虑的原因
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
21
29
左右 -38% 更低的延时
更快的读取速度,GB/s
17.6
12.1
测试中的平均数值
更快的写入速度,GB/s
12.2
7.8
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
21
读取速度,GB/s
12.1
17.6
写入速度,GB/s
7.8
12.2
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2177
3126
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Samsung M393B1G70BH0-YK0 8GB
Corsair CMK32GX4M2F4000C19 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston 9905678-138.A00G 8GB
Samsung M378B5673EH1-CF8 2GB
Hyundai Inc AR32C16S8K2HU416R 8GB
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-3000C15-8GVR 8GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMW16GX4M2C3466C16 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
AMD R748G2400U2S 8GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-2800C16-8GRR 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
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