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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
需要考虑的原因
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
29
左右 -53% 更低的延时
更快的读取速度,GB/s
20
13.4
测试中的平均数值
更快的写入速度,GB/s
16.2
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
19
读取速度,GB/s
13.4
20.0
写入速度,GB/s
9.0
16.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
3542
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
SK Hynix HMA81GS6AFR8N-UH 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4DFD824A.C16FDR 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GVS 8GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston LV32D4U2S8ME-16X 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471B1G73QH0-YK0 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GVS 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
报告一个错误
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Bug description
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