Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Crucial Technology CT16G4SFD8266.C16FD1 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

总分

Crucial Technology CT16G4SFD8266.C16FD1 16GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 19% 更低的延时

Crucial Technology CT16G4SFD8266.C16FD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C16FD1 16GB

报告一个错误

更快的读取速度，GB/s

15.9 13.4

测试中的平均数值
更快的写入速度，GB/s

12.7 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Crucial Technology CT16G4SFD8266.C16FD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 36
读取速度，GB/s

13.4 15.9
写入速度，GB/s

9.0 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 2907

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSB.M8FBD 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMAA2GS6CJR8N-XN 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Kingston KHX2666C15/16GX 16GB

Kingston KHX2666C15/16GX 16GB