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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
40
左右 28% 更低的延时
更快的读取速度,GB/s
13.4
9.1
测试中的平均数值
更快的写入速度,GB/s
9.0
6.9
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
40
读取速度,GB/s
13.4
9.1
写入速度,GB/s
9.0
6.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
2031
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
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SK Hynix HMA82GS6CJR8N-V-V 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
报告一个错误
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