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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Kingston 9905744-006.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Kingston 9905744-006.A00G 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

总分
star star star star star
Kingston 9905744-006.A00G 16GB

Kingston 9905744-006.A00G 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
Kingston 9905744-006.A00G 16GB 需要考虑的原因
Kingston 9905744-006.A00G 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Kingston 9905744-006.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    12.3 left arrow 14.7
  • 写入速度，GB/s
    7.4 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1678 left arrow 2900

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston 9905744-006.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C
Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
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内存RAM
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