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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
总分
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
31
左右 16% 更低的延时
需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
更快的读取速度,GB/s
20.5
12.3
测试中的平均数值
更快的写入速度,GB/s
15.5
7.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
31
读取速度,GB/s
12.3
20.5
写入速度,GB/s
7.4
15.5
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1678
3649
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM的比较
SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HYMP112U64CP8-Y5 1GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMW16GX4M2Z3200C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GU7CJR8N-VK 8GB
AMD AE34G1601U1 4GB
Kingston KV0M5R-MIE 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-4000C18-8GTRG 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMD64GX4M4C3200C16 16GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965667-001.A00G 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Samsung M378B5273DH0-CH9 4GB
G Skill Intl F4-3200C16-16GTZA 16GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3866C18-4GVK 4GB
Kingston 99U5474-010.A00LF 2GB
Apacer Technology 78.CAGR4.DFC0B 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965589-030.D01G 8GB
报告一个错误
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Bug description
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