RAM comparison Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Faster reading speed, GB/s

20.5 12.3

Average value in the tests
Faster write speed, GB/s

15.5 7.4

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1678 3649

RAM Latency Calculator

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RAM 1

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RAM 2

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