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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
31
Around 16% lower latency
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Faster reading speed, GB/s
20.5
12.3
Average value in the tests
Faster write speed, GB/s
15.5
7.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
31
Read speed, GB/s
12.3
20.5
Write speed, GB/s
7.4
15.5
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1678
3649
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM comparisons
SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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