Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology BLT8G4D30AETA.K16FD 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Crucial Technology BLT8G4D30AETA.K16FD 8GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Crucial Technology BLT8G4D30AETA.K16FD 8GB

需要考虑的原因
Crucial Technology BLT8G4D30AETA.K16FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 62

左右 -265% 更低的延时
更快的读取速度，GB/s

20.8 7.4

测试中的平均数值
更快的写入速度，GB/s

16.8 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Crucial Technology BLT8G4D30AETA.K16FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 17
读取速度，GB/s

7.4 20.8
写入速度，GB/s

5.9 16.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1612 3623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M4D3000C16 8GB

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G Skill Intl F4-3600C16-8GTZKK 8GB

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Kingston X74R9W-MIE 8GB

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Corsair CMK64GX4M8X3600C18 8GB

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Peak Electronics 256X64M-67E 2GB

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Corsair CM4X8GF2400C16N2 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Corsair CMR32GX4M4C3000C16 8GB

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A-DATA Technology DDR2 800G 2GB

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

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Samsung M393B1K70CH0-YH9 8GB

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G Skill Intl F4-4400C19-16GVK 16GB

G Skill Intl F4-4400C19-16GVK 16GB