Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-3200C14-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-3200C14-8GTZR 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

G Skill Intl F4-3200C14-8GTZR 8GB

G Skill Intl F4-3200C14-8GTZR 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

G Skill Intl F4-3200C14-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 62

左右 -138% 更低的延时
更快的读取速度，GB/s

19.4 7.4

测试中的平均数值
更快的写入速度，GB/s

15.6 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

G Skill Intl F4-3200C14-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 26
读取速度，GB/s

7.4 19.4
写入速度，GB/s

5.9 15.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1612 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M2A1600C9 2GB

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Corsair CM4X4GF2400C14K4 4GB

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Samsung M378B5773CH0-CH9 2GB

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Team Group Inc. DDR4 2800 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston KVR533D2N4 512MB

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Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

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Samsung M386A8K40BMB-CPB 64GB

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Samsung M378A1K43EB2-CWE 8GB