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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs G Skill Intl F4-4000C16-16GTZRA 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
G Skill Intl F4-4000C16-16GTZRA 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GTZRA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 62
    左右 -121% 更低的延时
  • 更快的读取速度，GB/s
    20.9 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.4 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 28
  • 读取速度，GB/s
    7.4 left arrow 20.9
  • 写入速度，GB/s
    5.9 left arrow 17.4
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 3963

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB

G Skill Intl F4-4000C16-16GTZRA 16GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CM4X8GF2666Z16K4 8GB
Corsair CM4X8GF2666Z16K4 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-4000C16-16GTZRA 16GB
G Skill Intl F4-4000C16-16GTZRA 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMT128GX4M8X3600C18 16GB
Corsair CMT128GX4M8X3600C18 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CM4X8GE2666C16K8 8GB
Corsair CM4X8GE2666C16K8 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-2800C14-16GVK 16GB
G Skill Intl F4-2800C14-16GVK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
A-DATA Technology AM1P24HC4R1-BUNS 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston HX424C15PB/4 4GB
Kingston HX424C15PB/4 4GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMK16GX4M4B3866C18 4GB
Corsair CMK16GX4M4B3866C18 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMD8GX4M2B3600C18 4GB
Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM