Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Smart Modular SF4641G8CKHI6DFSEG 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Smart Modular SF4641G8CKHI6DFSEG 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
Smart Modular SF4641G8CKHI6DFSEG 8GB

Smart Modular SF4641G8CKHI6DFSEG 8GB

差异

  • 低于PassMark测试中的延时,ns
    32 left arrow 62
    左右 -94% 更低的延时
  • 更快的读取速度,GB/s
    16.9 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    13.2 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时,ns
    62 left arrow 32
  • 读取速度,GB/s
    7.4 left arrow 16.9
  • 写入速度,GB/s
    5.9 left arrow 13.2
  • 内存带宽,mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1612 left arrow 2774
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最新比较