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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Corsair CMV8GX4M1A2133C15 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Corsair CMV8GX4M1A2133C15 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
总分
Corsair CMV8GX4M1A2133C15 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
34
左右 18% 更低的延时
需要考虑的原因
Corsair CMV8GX4M1A2133C15 8GB
报告一个错误
更快的读取速度,GB/s
14.8
10.9
测试中的平均数值
更快的写入速度,GB/s
9.7
7.1
测试中的平均数值
更高的内存带宽,mbps
17000
8500
左右 2 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Corsair CMV8GX4M1A2133C15 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
34
读取速度,GB/s
10.9
14.8
写入速度,GB/s
7.1
9.7
内存带宽,mbps
8500
17000
Other
描述
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1668
2583
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM的比较
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMV8GX4M1A2133C15 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 99U5595-005.A00LF 2GB
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Samsung M393B1K70CH0-CH9 8GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Hexon Technology Pte Ltd HEXON 1GB
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Apacer Technology GD2.0918CT.001 4GB
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DSL Memory D4SS12082SH21A-A 8GB
报告一个错误
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Bug description
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