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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs Wilk Elektronik S.A. GY2133D464L15/8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
总分
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
报告一个错误
更快的写入速度,GB/s
7.4
6.7
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
26
左右 -4% 更低的延时
更快的读取速度,GB/s
13.3
12.3
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
25
读取速度,GB/s
12.3
13.3
写入速度,GB/s
7.4
6.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1678
2003
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB RAM的比较
SK Hynix HMT325U6CFR8C-H9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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