Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905624-044.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9905624-044.A00G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston 9905624-044.A00G 8GB

Kingston 9905624-044.A00G 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时
更快的读取速度，GB/s

16 12.8

测试中的平均数值
更快的写入速度，GB/s

12.5 6.1

测试中的平均数值

Kingston 9905624-044.A00G 8GB

需要考虑的原因
Kingston 9905624-044.A00G 8GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905624-044.A00G 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

16.0 12.8
写入速度，GB/s

12.5 6.1
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 1974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Kingston 9965600-018.A00G 16GB

Kingston 9965600-018.A00G 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-4400C16-8GVK 8GB

G Skill Intl F4-4400C16-8GVK 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

A-DATA Technology AM1P26KC4U1-BACS 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4266C19-8GTRG 8GB

G Skill Intl F4-4266C19-8GTRG 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-2400C16-8GFT 8GB

G Skill Intl F4-2400C16-8GFT 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMK16GX4M4B3866C18 4GB

Corsair CMK16GX4M4B3866C18 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB