Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs G Skill Intl F4-3000C15-8GVKB 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

总分

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

报告一个错误

G Skill Intl F4-3000C15-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-3000C15-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 -7% 更低的延时
更快的读取速度，GB/s

18.3 8.8

测试中的平均数值
更快的写入速度，GB/s

14.0 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

G Skill Intl F4-3000C15-8GVKB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 28
读取速度，GB/s

8.8 18.3
写入速度，GB/s

5.6 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1344 3409

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C

G Skill Intl F4-3000C15-8GVKB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Apacer Technology 78.CAGN4.4020B 8GB

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Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

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Kingston 9905403-500.A01LF 8GB

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Kingston KF556C40-16 16GB

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Kingston 9965667-001.A00G 16GB

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