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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs G Skill Intl F4-4133C19-8GTZRF 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

总分
star star star star star
G Skill Intl F4-4133C19-8GTZRF 8GB

G Skill Intl F4-4133C19-8GTZRF 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 32
    左右 16% 更低的延时
G Skill Intl F4-4133C19-8GTZRF 8GB 需要考虑的原因
G Skill Intl F4-4133C19-8GTZRF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 8.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 32
  • 读取速度，GB/s
    13.2 left arrow 15.7
  • 写入速度，GB/s
    8.9 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2245 left arrow 3098

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM的比较

Samsung M378B5173QH0-CK0 4GB

G Skill Intl F4-4133C19-8GTZRF 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
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Kingston KF3733C19D4/16GX 16GB
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Golden Empire CL19-25-25 D4-4000 4GB
Golden Empire CL19-25-25 D4-4000 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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G Skill Intl F4-4133C19-4GTZ 4GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Samsung M393A1K43BB0-CRC 8GB
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AMD R5S38G1601U2S 8GB
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Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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内存RAM
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内存RAM
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内存RAM
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SK Hynix HYMP112U64CP8-S5 1GB
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