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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Samsung M378B5173QH0-CK0 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

总分
star star star star star
Samsung M378B5173QH0-CK0 4GB

Samsung M378B5173QH0-CK0 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 43
    左右 37% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 8.2
    测试中的平均数值
Samsung M378B5173QH0-CK0 4GB 需要考虑的原因
Samsung M378B5173QH0-CK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.9 left arrow 13.2
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Samsung M378B5173QH0-CK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 43
  • 读取速度，GB/s
    13.2 left arrow 13.9
  • 写入速度，GB/s
    8.9 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2245 left arrow 2216

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM的比较

G Skill Intl F4-4133C19-8GTZRF 8GB

Samsung M378B5173QH0-CK0 4GB RAM的比较

Kingston 99U5403-468.A00LF 8GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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