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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C14-8GTRSB 8GB
比较
takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-3600C14-8GTRSB 8GB
总分
takeMS International AG TMS2GB264D082-805G 2GB
总分
G Skill Intl F4-3600C14-8GTRSB 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
更快的读取速度,GB/s
5
17.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C14-8GTRSB 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
46
左右 -48% 更低的延时
更快的写入速度,GB/s
17.1
1,852.4
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C14-8GTRSB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
31
读取速度,GB/s
5,535.6
17.7
写入速度,GB/s
1,852.4
17.1
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
858
3711
takeMS International AG TMS2GB264D082-805G 2GB RAM的比较
Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB
G Skill Intl F4-3600C14-8GTRSB 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5403-036.A00G 4GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9965596-029.B00G 4GB
Kingston ACR512X64D3S13C9G 4GB
Kllisre M378A1K43BB2-CRC 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Kllisre M378A1K43BB2-CRC 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK8GX4M1D2400C14 8GB
ASint Technology SSA302G08-GGNHC 4GB
Essencore Limited IM48GU88N26-GIIHA 8GB
Samsung M391B5673EH1-CH9 2GB
Kingston X74R9W-MIE 8GB
A-DATA Technology VDQVE1B16 2GB
Panram International Corporation PUD42133C154G2VS 4GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A2K43DB1-CTD 16GB
G Skill Intl F3-1600C11-4GIS 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3200C16-8GTZKO 8GB
报告一个错误
×
Bug description
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