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Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB
Corsair CMD16GX4M2B2400C10 8GB

Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB vs Corsair CMD16GX4M2B2400C10 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB

总分
star star star star star
Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.2
    测试中的平均数值
Corsair CMD16GX4M2B2400C10 8GB 需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 90
    左右 -233% 更低的延时
  • 更快的写入速度，GB/s
    14.0 left arrow 1,140.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB
Corsair CMD16GX4M2B2400C10 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    90 left arrow 27
  • 读取速度，GB/s
    2,699.0 left arrow 18.2
  • 写入速度，GB/s
    1,140.4 left arrow 14.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    436 left arrow 3538

Hynix Semiconductor (Hyundai Electronics) HMP125S6EFR8C-Y5 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Kingston MSI24D4S7D8MHMH6 16GB

Corsair CMD16GX4M2B2400C10 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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