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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C16-16GIS 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-3200C16-16GIS 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
G Skill Intl F4-3200C16-16GIS 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
18
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3200C16-16GIS 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
65
左右 -132% 更低的延时
更快的写入速度,GB/s
14.1
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3200C16-16GIS 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
28
读取速度,GB/s
3,580.8
18.0
写入速度,GB/s
1,592.0
14.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3537
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-3200C16-16GIS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-3200C16-16GIS 16GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CM4X16GE2933C19S2 16MB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-2400C17-4GIS 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 18ASF1G72PZ-2G1B1 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT51264BD160B.C16F 4GB
V-Color Technology Inc. TA48G36S818BN 8GB
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology DDR4 3000 8GB
Samsung M471B5273EB0-CK0 4GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Samsung M471A1G44AB0-CWE 8GB
Micron Technology 18HTF12872AY-800F1 1GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
报告一个错误
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Bug description
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