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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs G Skill Intl F4-4800C18-8GTRG 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
G Skill Intl F4-4800C18-8GTRG 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
16.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4800C18-8GTRG 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
65
左右 -124% 更低的延时
更快的写入速度,GB/s
15.4
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
29
读取速度,GB/s
3,580.8
16.7
写入速度,GB/s
1,592.0
15.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3552
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
G Skill Intl F4-4800C18-8GTRG 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 9965589-035.D00G 16GB
Samsung M391B1G73QH0-CMA 8GB
Corsair CMWX16GC3000C16W4D 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3300C16-16GTZ 16GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-2800C15-4GTZB 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston HP28D4S7D8HA-16X 16GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Corsair CML16GX3M2A1600C10 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-3000C15-8GVGB 8GB
Kingston 9905584-016.A00LF 4GB
INTENSO 4GB
Kingston KVT8FP-HYC 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston KMKYF9-MIB 8GB
A-DATA Technology AD73I1C1674EV 4GB
Samsung M378A1G43EB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4800C18-8GTRG 8GB
Samsung M471B1G73BH0-YK0 8GB
DSL Memory D4SS1G081SH24A-A 8GB
报告一个错误
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Bug description
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