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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Micron Technology HMA81GU6AFR8N-UH 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Micron Technology HMA81GU6AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
13.7
测试中的平均数值
需要考虑的原因
Micron Technology HMA81GU6AFR8N-UH 8GB
报告一个错误
低于PassMark测试中的延时,ns
24
65
左右 -171% 更低的延时
更快的写入速度,GB/s
6.4
1,592.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
24
读取速度,GB/s
3,580.8
13.7
写入速度,GB/s
1,592.0
6.4
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
572
2046
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-140.A00LF 8GB
Kingston 9965662-013.A01G 16GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.CAGN4.4020B 8GB
Swissbit MEU25664D6BC2EP-30 2GB
Essencore Limited KD48GU880-32A160X 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK8GX4M1A2666C16 8GB
A-DATA Technology DQKD1A08 1GB
Corsair CMW64GX4M8C3466C16 8GB
G Skill Intl F5-6400J3239G16G 16GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.CAGNT.4050B 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4000C18-16GTZN 16GB
Samsung M471B5173DB0-YK0 4GB
Samsung M378A2G43MB1-CTD 16GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA41GR7MFR4N-TF 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Samsung 1600 CL10 Series 8GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
报告一个错误
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Bug description
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