RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Micron Technology HMA81GU6AFR8N-UH 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Overall score
Micron Technology HMA81GU6AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Report a bug
Faster reading speed, GB/s
3
13.7
Average value in the tests
Reasons to consider
Micron Technology HMA81GU6AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
65
Around -171% lower latency
Faster write speed, GB/s
6.4
1,592.0
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
65
24
Read speed, GB/s
3,580.8
13.7
Write speed, GB/s
1,592.0
6.4
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
572
2046
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM comparisons
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Micron Technology HMA81GU6AFR8N-UH 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMSX32GX4M2A2666C18 16GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMW16GX4M2C3600C18 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Micron Technology HMA81GU6AFR8N-UH 8GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64AZ-2G3H1 8GB
Team Group Inc. ZEUS-2133 8GB
Avant Technology J642GU42J2320NQ 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
Kingston 9905403-011.A03LF 2GB
Transcend Information JM3200HSE-32G 32GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
Kingston 9905403-174.A00LF 2GB
Corsair CMK16GX4M2A2800C16 8GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3733C17-8GTZKW 8GB
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
AMD AE34G1601U1 4GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Report a bug
×
Bug description
Source link