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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Samsung V-GeN D4S8GL30A8TX5 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分
star star star star star
Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.8
    测试中的平均数值
Samsung V-GeN D4S8GL30A8TX5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL30A8TX5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 65
    左右 -183% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,592.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Samsung V-GeN D4S8GL30A8TX5 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 23
  • 读取速度，GB/s
    3,580.8 left arrow 16.8
  • 写入速度，GB/s
    1,592.0 left arrow 11.7
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    572 left arrow 3147

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB

Samsung V-GeN D4S8GL30A8TX5 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
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SK Hynix HMT451S6BFR8A-PB 4GB
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Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
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SK Hynix HMT41GU7MFR8A-H9 8GB
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Patriot Memory (PDP Systems) 2666 C18 Series 16GB
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Samsung M3 78T2863EHS-CF7 1GB
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Kingston 9965433-034.A00LF 4GB
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Crucial Technology BLS16G4D240FSE.16FBD 16GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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G Skill Intl F4-3200C16-4GRK 4GB
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A-DATA Technology DDR3 1600 4GB
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SK Hynix HMA84GR7JJR4N-VK 32GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
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Corsair CMW32GX4M4D3600C18 8GB
内存RAM
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SK Hynix HMT351U6CFR8C-H9 4GB
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Kingston 9905703-009.A00G 16GB
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Chun Well Technology Holding Limited CL18-22-22 D4-3600
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Crucial Technology CT51264BA1339.C16F 4GB
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内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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V-Color Technology Inc. TA48G36S818BN 8GB
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