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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
总分
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
更快的读取速度,GB/s
3
17.9
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
31
65
左右 -110% 更低的延时
更快的写入速度,GB/s
14.7
1,592.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
65
31
读取速度,GB/s
3,580.8
17.9
写入速度,GB/s
1,592.0
14.7
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
572
3444
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较
Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB
Wilk Elektronik S.A. IRP3600D4V64L17S/8G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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SK Hynix DDR2 800 2G 2GB
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Crucial Technology BLS8G4D26BFSE.16FB 8GB
报告一个错误
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