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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 2800 2OZ 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs A-DATA Technology DDR4 2800 2OZ 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
A-DATA Technology DDR4 2800 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
33
左右 27% 更低的延时
更快的写入速度,GB/s
12.5
12.2
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB
报告一个错误
更快的读取速度,GB/s
16.2
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
A-DATA Technology DDR4 2800 2OZ 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
33
读取速度,GB/s
16.0
16.2
写入速度,GB/s
12.5
12.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3026
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
A-DATA Technology DDR4 2800 2OZ 4GB RAM的比较
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 2800 2OZ 4GB
Kingston 99U5471-052.A00LF 8GB
Kingmax Semiconductor GLAG43F-18---------- 8GB
AMD AE34G1601U1 4GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Samsung M378A5244CB0-CTD 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK16GX4M2Z3466C16 8GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-2666C18-32GRS 32GB
Samsung M471B5273EB0-CK0 4GB
Samsung M391A1K43BB2-CTD 8GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Samsung M471B5273DH0-CH9 4GB
Transcend Information TS1GLH64V4B 8GB
Samsung M393B1G70QH0-YK0 8GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Essencore Limited KD48GU880-32A160T 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-2666C19-16GIS 16GB
Samsung M378B5273CH0-CH9 4GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C15-8GFX 8GB
报告一个错误
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Bug description
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