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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Asgard VMA41UF-MEC1U2BQ2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Asgard VMA41UF-MEC1U2BQ2 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 29
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 12.0
    测试中的平均数值
Asgard VMA41UF-MEC1U2BQ2 4GB 需要考虑的原因
Asgard VMA41UF-MEC1U2BQ2 4GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Asgard VMA41UF-MEC1U2BQ2 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 29
  • 读取速度，GB/s
    16.0 left arrow 15.7
  • 写入速度，GB/s
    12.5 left arrow 12.0
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2553

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Asgard VMA41UF-MEC1U2BQ2 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Asgard VMA41UF-MEC1U2BQ2 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
JUHOR JHD2666U1916JG 16GB
JUHOR JHD2666U1916JG 16GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3733C17-16GTZKK 16GB
G Skill Intl F4-3733C17-16GTZKK 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston HP32D4U8D8HC-16X 16GB
Kingston HP32D4U8D8HC-16X 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
InnoDisk Corporation M4S0-8GS1NCIK 8GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung V-GeN D4S8GL24A8 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.CAGRN.40C0B 8GB
Apacer Technology 78.CAGRN.40C0B 8GB
内存RAM