RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
26
左右 8% 更低的延时
更快的读取速度,GB/s
16
15.6
测试中的平均数值
更快的写入速度,GB/s
12.5
11.6
测试中的平均数值
需要考虑的原因
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
26
读取速度,GB/s
16.0
15.6
写入速度,GB/s
12.5
11.6
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2808
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905783-025.A01G 16GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3000C14-16GVR 16GB
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMU64GX4M4C3200C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMU16GX4M2D3000C16 8GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK16GX4M2K4266C16 8GB
Essencore Limited KD48GU88C-26N1600 8GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
×
Bug description
Source link