Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Chun Well Technology Holding Limited D4U0832161B 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 29% 更低的延时

Chun Well Technology Holding Limited D4U0832161B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832161B 8GB

报告一个错误

更快的读取速度，GB/s

19.1 16

测试中的平均数值
更快的写入速度，GB/s

12.6 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 34
读取速度，GB/s

16.0 19.1
写入速度，GB/s

12.5 12.6
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 3178

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology CT16G4SFD824A.C16FDD 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Gold Key Technology Co Ltd NMUD480E84-3000D 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited D4U0832161B 8GB

Chun Well Technology Holding Limited D4U0832161B 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMV8GX4M1A2133C15 8GB

Corsair CMV8GX4M1A2133C15 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Golden Empire CL18-20-20 D4-3000 8GB

Golden Empire CL18-20-20 D4-3000 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C15-8GNT 8GB

G Skill Intl F4-2400C15-8GNT 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMK32GX4M2A2800C16 16GB

Corsair CMK32GX4M2A2800C16 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix HMA851S6CJR6N-UH 4GB

SK Hynix HMA851S6CJR6N-UH 4GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston 9905700-053.A00G 8GB

Kingston 9905700-053.A00G 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Team Group Inc. TEAMGROUP-SD4-3200 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT16G4SFD824A.M16FR 16GB

Crucial Technology CT16G4SFD824A.M16FR 16GB