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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMK16GX4M2A2133C13 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMK16GX4M2A2133C13 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Corsair CMK16GX4M2A2133C13 8GB

Corsair CMK16GX4M2A2133C13 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 33
    左右 27% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 11.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Corsair CMK16GX4M2A2133C13 8GB 需要考虑的原因
Corsair CMK16GX4M2A2133C13 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 16
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMK16GX4M2A2133C13 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 33
  • 读取速度，GB/s
    16.0 left arrow 16.2
  • 写入速度，GB/s
    12.5 left arrow 11.6
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2907

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Corsair CMK16GX4M2A2133C13 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2A2133C13 8GB
Corsair CMK16GX4M2A2133C13 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston ACR21D4S15HAG/8G 8GB
Kingston ACR21D4S15HAG/8G 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
ADVAN Inc AM42E28UD04T-NVL 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM