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PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

PNY Electronics PNY 2GB vs Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.8 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.8 left arrow 17.8
  • 写入速度，GB/s
    8.4 left arrow 14.1
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3434

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMK16GX4M2A2800C16 8GB
Corsair CMK16GX4M2A2800C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3466C16-8GVR 8GB
G Skill Intl F4-3466C16-8GVR 8GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F4-3200C18-16GRS 16GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9965600-033.A00G 16GB
Kingston 9965600-033.A00G 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hewlett-Packard 7EH64AA# 8GB
Hewlett-Packard 7EH64AA# 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CMK64GX4M2A2400C16 32GB
Corsair CMK64GX4M2A2400C16 32GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM