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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMSO4GX4M1A2133C15 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Corsair CMSO4GX4M1A2133C15 4GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Corsair CMSO4GX4M1A2133C15 4GB

Corsair CMSO4GX4M1A2133C15 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 14% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Corsair CMSO4GX4M1A2133C15 4GB 需要考虑的原因
Corsair CMSO4GX4M1A2133C15 4GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMSO4GX4M1A2133C15 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 28
  • 读取速度，GB/s
    16.0 left arrow 12.2
  • 写入速度，GB/s
    12.5 left arrow 8.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2018

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Corsair CMSO4GX4M1A2133C15 4GB RAM的比较

PNY Electronics PNY 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMSO4GX4M1A2133C15 4GB
Corsair CMSO4GX4M1A2133C15 4GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
AMD R334G1339U2S 4GB
AMD R334G1339U2S 4GB
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Corsair CM4X16GC3000C15K4 16GB
Corsair CM4X16GC3000C15K4 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Avant Technology J642GU42J5213N2 16GB
Avant Technology J642GU42J5213N2 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Golden Empire CL15-17-17 D4-3200 8GB
Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-007.A00G 8GB
Kingston 9905702-007.A00G 8GB
内存RAM