Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Crucial Technology CT8G4SFS824A.C8FBR1 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 30

左右 20% 更低的延时
更快的读取速度，GB/s

16 13.3

测试中的平均数值
更快的写入速度，GB/s

12.5 10.0

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FBR1 8GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Crucial Technology CT8G4SFS824A.C8FBR1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 30
读取速度，GB/s

16.0 13.3
写入速度，GB/s

12.5 10.0
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Kingston 9905702-082.A00G 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Crucial Technology CT16G4SFD8266.M16FE 16GB

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